News Archive for 2016

December 4, 2016

62nd International Electron Devices Meeting (IEDM), San Francisco

December 3-7, 2016

Everspin Technologies, jointly with GlobalFoundries, will present an invited paper titled: “Technology for Reliable Spin-Torque MRAM Products”

Speaking for Everspin, Jon Slaughter, Ph.D., Vice President, Technology Research and Development at Everspin Technologies states, “… we will present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.”

December 6th, 4pm in Session 2

October 27, 2016

Making Unforgettable MRAM Memory with OpenPOWER

By Adam McPadden, Lead Engineer, Burlington Systems Lab, IBM

One of the key tenets of the OpenPOWER Foundation’s collaborative model is that having open systems and published interfaces allows people to create innovative architectures at all different areas of the system, including ones where there hasn’t been much change in decades like memory.

In validation of this approach, OpenPOWER members IBM, and Everspin have demonstrated a new way for OpenPOWER members to improve application performance with STT-MRAM on the memory bus of a POWER8 server.

Read the Article

September 16, 2016

Global Foundries to Introduce Everspin eMRAM with FD-SOI Chips

Excerpt from the Wall Street Journal, “Global Foundries Plans Big Investment in New York State Chip Plant,” story by Don Clark

…the company [Global Foundries] plans to offer future FD-SOI chips with the ability to store data using a new technology called magnetoresistive random-access memory. Global Foundries will introduce circuitry developed by Everspin Technologies Inc., a Chandler, Ariz., company that has been working on alternatives to existing memory chips.

Read the entire article

September 16, 2016

GF Debuts 7nm, Embedded MRAM

by Rick Merritt, EE Times

SANTA CLARA, Calif. – Globalfoundries announced plans for a 7nm FinFET process that can deliver chips with up to 30% more performance or 60% less power consumption than its current 14nm node. The process will be in production in late 2018, delivering gate pitches as small as 30nm initially using only today’s optical lithography.

Read the entire article

September 16, 2016

MRAM Is Becoming Mainstream Memory

by Tom Coughlin, Forbes

Two announcements this week on Magnetic Random Access Memory (MRAM) by Everspin and its manufacturing partner, Global Foundries, accelerate the move of this emerging memory from the lab to the fab. Major new product introductions for stand-alone and embedded memory are expected to serve a variety of consumer, industrial and enterprise applications.

Read the entire article

September 10, 2016

Everspin Technologies Demonstrates World's Fastest SSD with ST-MRAM

Everspin Technologies showcases MRAM Technology at GLOBAL FOUNDRIES Technical Conference 2016

Everspin will be demonstrate the world’s fastest SSD, with continuous write operations of 1.5 Million IOPS, using our latest perpendicular ST-MRAM technology.  

Visitors to the conference Exhibit Room can witness a live demonstration of a PCIe NVMe SSD using Everspin’s 256Mb DDR3 perpendicular ST-MRAM manufactured by GLOBAL FOUNDRIES.

Everspin and GLOBAL FOUNDRIES have been in partnership since 2014, bringing ST-MRAM to commercial production in advanced 300mm wafer technology

Register

August 5, 2016

Everspin to show world's fastest SSD

by Robin Harris for Storage Bits, August 4, 2016

Non-volatile RAM -- NVRAM for short -- is the Next Big Thing in digital storage. Everspin has announced that the industry's first Perpendicular Magnetic Tunnel Junction chip is now shipping. The company will demo the worlds's fastest SSD using it next week.

At the Flash Memory Summit, Everspin will demo what it bills as the world's fastest SSD, a single PCIe card capable of 1.5 million random 4k writes per second. Since most Flash SSD-based arrays can't manage 1 million reads per second, yeah, it's fast.

Read the entire article

May 12, 2016

Everspin Aims MRAM at SSD Storage Tiers

by Gary Hilson, EE Times DesignLines
  

May 12, 2016

Everspin's MRAM shoots for the NVM crown

By Robin Harris for Storage Bits

While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.

Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.

Read the entire article

May 12, 2016

New non-volatile memory technologies poised to reshape system and application design