News Stories and Press Releases

August 23, 2017

Everspin Appoints Semiconductor Storage Veteran Kevin Conley as CEO

CHANDLER, Ariz., Aug. 23, 2017 -- Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM), today announced it had named Kevin Conley as its President and Chief Executive Officer effective Sept. 1. Conley succeeds Phill LoPresti as the company moves aggressively to capitalize on Storage Class Memory opportunities with its MRAM technology leadership.

 

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August 21, 2017

Four Foundries Back MRAM

Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology.

GlobalFoundries, Samsung, TSMC and UMC plan to start offering spin-transfer torque magnetoresistive RAM (ST-MRAM or STT-MRAM) as an alternative or a replacement to NOR flash, possibly starting later this year. This represents a big shift in the market, because until now only Everspin has shipped MRAM for various applications, such as a battery-backed SRAM replacement, write-cache and others.

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August 17, 2017

What is Spin Torque MRAM?

The memory market is going in several different directions at once. On one front, the traditional memory types, such as DRAM and flash, remain the workhorse technologies. Then, several vendors are readying the next-generation memory types.

As part of an ongoing series, Semiconductor Engineering will explore where the new and traditional memory technologies are heading.

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August 10, 2017

Everspin Announces Second Quarter 2017 Financial Results

Chandler, AZ, August 10, 2017— Everspin Technologies, Inc. (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the company’s second quarter 2017 financial results for the quarter ended June 30, 2017.

 

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August 9, 2017

Everspin’s new MRAM-based nvNITRO NVMe card delivers Optane-crushing 1.46 million IOPS

This week, Everspin launched its line of MRAM-based nvNITRO NVMe Storage Accelerator cards with an incredible performance spec: up to 1.46 million IOPS for random 4Kbyte mixed 70/30 read/write operations. In the world of IOPS, that’s very fast. In fact it’s roughly 3x faster than an Intel P4800X Optane SSD card, which is spec’ed at up to 500K IOPS for random 4Kbyte mixed 70/30 read/write operations. Multiple factors contribute to the nvNITRO Storage Accelerator’s speed including Everspin’s new 1Gbit Spin Torque Magnetorestrictive RAM (ST-MRAM) with high-speed, DDR4, SDRAM-compatible I/O; a high-performance, MRAM-specific memory controller IP block compatible with NVMe 1.1+; and the Xilinx Kintex UltraScale KU060 FPGA that implements the MRAM controller and the board’s PCIe Gen3 x8 host interface. Everspin’s nvNITRO NVMe cards will ship in Q4 of 2017 and will be available in 1 and 2Gbyte capacities.

 

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August 8, 2017

Non-Volatile RAM is Real – Everspin Briefing Note

The future is now. For years it seems like non-volatile RAM (NVRAM) has been a technology that is just over the horizon. While there have been some isolated use cases where the technology makes sense and is being used, we are now entering, actually we’ve entered, an era where broad adoption of the technology is realistic. To underscore the state of NVRAM, Everspin Technologiesis now shipping its first version of its nvNITRO Storage Accelerator which puts NVRAM technology in the hands of data center planners and storage system builders.

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August 8, 2017

Everspin hits the 1Gb milestone with new 28nm MRAMs

Eversping has a bunch of MRAM announcements today starting with the first Gigabit device. On top of that there are a few PCIe based accelerator boards to talk about.

SemiAccurate has always thought Everspin technology was interesting and saw a lot of potential for the products. Until today you could only get their MRAM in 256Mb capacities, enough for some applications but a bit of a psychological downer to be in the Mb class in a Gb world. Sure the tech was radically different but those numbers do make some skeptical. As we mentioned that changed with the introduction of today’s 1Gb class MRAMs. They are built on a Globalfoundries 28nm process, something SemiAccurate previously told you about, and will probably port down to the 22/20nm node soon enough.

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August 7, 2017

Everspin Announces Production Release of 1 and 2 Gigabyte nvNITRO NVMe SSDs

Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), the leading provider of MRAM solutions, today announced the production release of its nvNITRO™ line of storage accelerators, designed to deliver extremely fast read and write times with ultra-low latency. Everspin is launching the initial nvNITRO accelerators with 1GB and 2GB capacities, based on 256Mb DDR3 ST-MRAM.  The storage accelerators are orderable today, and will ship in Q417.  The nvNITRO accelerators operate up to 1.5 million IOPS with 6μs end-to-end latency. Everspin is delivering a half-height, half-length (HHHL) PCIe card as well as U.2 form factors; both support NVMe and memory mapped IO (MMIO) access modes.

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August 7, 2017

Everspin Announces Sampling of the World’s First 1-Gigabit MRAM Product

Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. These features enable storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of supercapacitors or batteries. Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and overprovisioning, common limitations for NAND Flash based SSDs. 

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August 7, 2017

Everspin Demonstrates Breakthrough Technologies at FMS 2017

Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), will be demonstrating significant new technologies at this year’s Flash Memory Summit, August 8-10th at the Santa Clara Convention Center. At this leading event for flash memory technology, Everspin will be launching the new nvNITRO™ Storage Accelerator based on its patented ST-MRAM technology while also demonstrating new industry firsts that far surpass the current capabilities of products in the flash memory market. 

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