News Stories and Press Releases

January 8, 2019

Everspin Ships the World’s First Pre-Production 28 nm 1 Gb STT-MRAM Customer Samples

Everspin Technologies, Inc., today announces that it commenced shipment of pre-production customer samples of its 28 nm 1-Gigabit (Gb) Spin Torque Transfer Magnetoresistive Random Access Memory (STT-MRAM) product in December 2018.

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November 12, 2018

SMART Modular Launches nvNITRO NVMe Storage Accelerator Featuring MRAM Technology in New U.2 Form Factor

SMART Modular Technologies, Inc., has partnered with Everspin Technologies, Inc., to enable the launch of the new Spin-Transfer Torque MRAM (STT-MRAM)-based nvNITRO Storage Accelerator. The nvNITRO is ideally suited for synchronous logging applications such as those used for financial trading. 

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November 8, 2018

Everspin Reports Third Quarter 2018 Financial Results

Chandler, AZ, November 8, 2018 — Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of discrete and embedded MRAM, today announced financial results for the third quarter ended September 30, 2018.

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November 5, 2018

Everspin and SilTerra join forces to create new manufacturing center for MRAM

Chandler, AZ, November 5, 2018 — Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), entered into a multi-year partnership with SilTerra, a world-class semiconductor manufacturing services company located in Kulim, Malaysia, to create additional manufacturing capacity for Toggle MRAM products.  This partnership is part of a three-way agreement between Everspin, SilTerra and Bosch Sensortec, a licensee of Everspin’s TMR sensor intellectual property.

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October 31, 2018

Everspin to Participate at Upcoming Investor Conferences

Chandler, AZ, October 31, 2018 — Everspin Technologies, Inc. (NASDAQ: MRAM), the market leader in MRAM, today announced that Jeff Winzeler, CFO, will participate at two conferences in New York City, including the Needham Networking, Communications & Security Conference at the Millennium Broadway Hotel on Tuesday, November 13, 2018, and the Craig-Hallum Alpha Select Conference at the Sheraton Times Square Hotel on Thursday, November 15, 2018.

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October 25, 2018

Everspin to Host Third Quarter 2018 Earnings Call on November 8

CHANDLER, Ariz.--(BUSINESS WIRE)--Oct. 25, 2018-- Everspin Technologies, Inc. (NASDAQ: MRAM), the market leader in MRAM, will review its third quarter 2018 financial results after market close on Thursday, November 8, 2018. Kevin Conley, President and CEO, and Jeff Winzeler, CFO, will host a conference call at 5:00 p.m. Eastern Time to discuss the Company’s financial results.

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August 24, 2018

Darin Billerbeck Joins Everspin Technologies Board of Directors

Chandler, AZ, August 24, 2018 — Everspin Technologies, Inc. (NASDAQ: MRAM), the market leader in MRAM, today announced that Darin Billerbeck, former CEO of Lattice Semiconductor, has been elected to Everspin’s Board of Directors.

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August 8, 2018

Everspin Reports Second Quarter 2018 Financial Results

Chandler, AZ, August 8, 2018 — Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of discrete and embedded MRAM, today announced financial results for the second quarter ended June 30, 2018.

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August 7, 2018

IBM Unveils 19TB SSD With Everspin MRAM Data Cache

Niche technologies like MRAM (magnetoresistive random access memory) have lived on the fringes of the mainstream memory business for decades. They tend to offer fringe benefits that make them attractive for certain, specific applications but are typically stuck with baggage that prevents them from addressing a wider space. A new announcement from IBM suggests MRAM could be moving into larger markets with more customers, courtesy of a new agreement with Everspin.

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August 7, 2018

IBM teams with Everspin on 19TB NVMe SSD utilizing MRAM

What just happened? IBM is turning to magnetoresistive random access memory (MRAM) write caches for its next generation of FlashSystem storage devices, moving away from traditional capacitor-backed DRAM.

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